SSM6N15AFE Description
SSM6N15AFE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III) SSM6N15AFE Load Switching Applications 2.5 V drive N-ch 2-in-1 Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V) RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V) 1.6±0.05 1.2±0.05 Unit: Using continuously under heavy loads (e.g.