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SSM6N15AFE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
SSM6N15AFE
Load Switching Applications
• 2.5 V drive • N-ch 2-in-1 • Low ON-resistance: RDS(ON) = 3.6 Ω (max) (@VGS = 4.0 V)
RDS(ON) = 6.0 Ω (max) (@VGS = 2.5 V)
1.6±0.05 1.2±0.05
Unit: mm
1
6
1.6±0.05 1.0±0.05 0.5 0.5
0.2±0.05
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
2
5
3
4
0.12±0.05
0.55±0.05
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
Power dissipation Channel temperature
DC Pulse
ID
100
mA
IDP
400
PD (Note 1)
150
mW
Tch
150
°C
ES6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N15AFE Datasheet
