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SSM6N17FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N17FU
High Speed Switching Applications Analog Switch Applications
• Suitable for high-density mounting due to compact package • High drain-source voltage • High speed switching
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
50
V
Gate-Source voltage
VGSS
±7
V
Drain current
DC Pulse
Drain power dissipation (Ta = 25°C)
Channel temperature
Storage temperature range
ID
100 mA
IDP
200
PD(Note 1)
200
mW
Tch
150
°C
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
JEDEC
―
temperature, etc.
SSM6N17FU Datasheet
