Full PDF Text Transcription for SSM6N40TU (Reference)
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SSM6N40TU. For precise diagrams, and layout, please refer to the original PDF.
SSM6N40TU TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type SSM6N40TU ○ Power Management Switch Applications ○ High-Speed Switching Applications • 4 V drive • N-...
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itch Applications ○ High-Speed Switching Applications • 4 V drive • N-ch 2-in-1 • Low ON-resistance: Ron = 182mΩ (max) (@VGS = 4 V) Ron = 122mΩ (max) (@VGS = 10 V) Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common) 2.0±0.1 1.3±0.1 0.65 0.65 2.1±0.1 1.7±0.1 Unit: mm +0.1 0.3-0.05 1 6 2 5 3 4 0.166±0.05 0.7±0.05 Characteristic Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ± 20 V Drain current DC ID Pulse IDP 1.6 A 3.2 Drain power dissipation PD (Note1) 500 mW UF6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.
SSM6N40TU Datasheet
