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SSM6N44FU
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N44FU
High Speed Switching Applications Analog Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
200
mW
Channel temperature Storage temperature range
Tch
150
°C
JEDEC
―
Tstg
−55 to 150
°C
JEITA
―
Note:
Using continuously under heavy loads (e.g.
SSM6N44FU Datasheet
