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SSM6N43FU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N43FU
○ High-Speed Switching Applications
• • 1.5-V drive Low ON-resistance : RDS(ON) = 1.52 Ω (max) (@VGS = 1.5V) : RDS(ON) = 1.14 Ω (max) (@VGS = 1.8V) : RDS(ON) = 0.85 Ω (max) (@VGS = 2.5V) : RDS(ON) = 0.66 Ω (max) (@VGS = 4.5V) : RDS(ON) = 0.63 Ω (max) (@VGS = 5.0V) Unit: mm
Absolute Maximum Ratings (Ta = 25°C) (Q1,Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDSS VGSS ID IDP PD (Note1) Tch Tstg Rating 20 ± 10 500 1000 200 150 −55 to 150 Unit V V mA mW °C °C
1.SOURCE1 2.GATE1 3.DRAIN2
4.SOURCE2 5.GATE2 6.DRAIN1
US6
Note:
JEDEC ― Using continuously under heavy loads (e.g.
SSM6N43FU Datasheet
