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SSM6N42FE
TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type
SSM6N42FE
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.5V drive • N-ch 2-in-1 • Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.5V)
: RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) : RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) : RDS(ON) = 240 mΩ (max) (@VGS = 4.5V)
Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common)
1.6±0.05 1.0±0.05 0.5 0.5
ES6
: mm 1.6±0.05 1.2±0.05
1
6
2
5
3
4
0.2±0.05
0.12±0.05
0.55±0.05
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
20
V
Gate–source voltage
VGSS
± 10
V
Drain current
DC
ID (Note 1)
800
mA
Pulse
IDP (Note 1)
1600
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N42FE Datasheet
