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SSM6N44FE - N-Channel MOSFET

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SSM6N44FE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N44FE High Speed Switching Applications Analog Switching Applications • Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V) : RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.6±0.05 1.0±0.05 0.5 0.5 1.6±0.05 1.2±0.05 Unit: mm 1 6 2 5 0.2±0.05 Characteristics Symbol Rating Unit 3 4 0.12±0.05 Drain-Source voltage VDSS 30 V Gate-Source voltage VGSS ±20 V Drain current DC Pulse ID 100 mA IDP 200 Drain power dissipation (Ta = 25°C) PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature range Tstg −55 to 150 °C 0.55±0.05 ES6 1.Source1 2.Gate1 3.Drain2 4.Source2 5.