The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM6N40TU
TOSHIBA Field-Effect Transistor Silicon N Channel MOS Type
SSM6N40TU
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 4 V drive • N-ch 2-in-1 • Low ON-resistance:
Ron = 182mΩ (max) (@VGS = 4 V) Ron = 122mΩ (max) (@VGS = 10 V)
Absolute Maximum Ratings (Ta = 25 °C) (Q1, Q2 Common)
2.0±0.1 1.3±0.1 0.65 0.65
2.1±0.1 1.7±0.1
Unit: mm
+0.1 0.3-0.05
1
6
2
5
3
4
0.166±0.05
0.7±0.05
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
1.6 A
3.2
Drain power dissipation
PD (Note1)
500
mW
UF6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6N40TU Datasheet
