Full PDF Text Transcription for SSM6N42FE (Reference)
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SSM6N42FE. For precise diagrams, and layout, please refer to the original PDF.
SSM6N42FE TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM6N42FE ○ Power Management Switch Applications ○ High-Speed Switching Applications • 1.5V drive • N...
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itch Applications ○ High-Speed Switching Applications • 1.5V drive • N-ch 2-in-1 • Low ON-resistance : RDS(ON) = 600 mΩ (max) (@VGS = 1.5V) : RDS(ON) = 450 mΩ (max) (@VGS = 1.8V) : RDS(ON) = 330 mΩ (max) (@VGS = 2.5V) : RDS(ON) = 240 mΩ (max) (@VGS = 4.5V) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) 1.6±0.05 1.0±0.05 0.5 0.5 ES6 : mm 1.6±0.05 1.2±0.05 1 6 2 5 3 4 0.2±0.05 0.12±0.05 0.55±0.05 Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ± 10 V Drain current DC ID (Note 1) 800 mA Pulse IDP (Note 1) 1600 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.
SSM6N42FE Datasheet
