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SSM6N44FE
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N44FE
High Speed Switching Applications Analog Switching Applications
• Compact package suitable for high-density mounting • Low ON-resistance : RDS(ON) = 4.0 Ω (max) (@VGS = 4 V)
: RDS(ON) = 7.0 Ω (max) (@VGS = 2.5 V)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
1.6±0.05 1.0±0.05 0.5 0.5
1.6±0.05 1.2±0.05
Unit: mm
1
6
2
5
0.2±0.05
Characteristics
Symbol
Rating
Unit
3
4
0.12±0.05
Drain-Source voltage
VDSS
30
V
Gate-Source voltage
VGSS
±20
V
Drain current
DC Pulse
ID
100
mA
IDP
200
Drain power dissipation (Ta = 25°C)
PD (Note 1)
150
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
0.55±0.05
ES6
1.Source1 2.Gate1 3.Drain2
4.Source2 5.
SSM6N44FE Datasheet
