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SSM6P28TU www.DataSheet4U.com
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM6P28TU
High-Speed Switching Applications Power Management Switch Applications
• • • 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 mΩ (max) (@VGS = −1.8 V)
0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1
Unit: mm
Ron = 306 mΩ (max) (@VGS = −2.5 V) Ron = 234 mΩ (max) (@VGS = −4.0 V)
1 2 3
6 5 4
Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 Common)
Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating −20 ±8 −0.8 −1.6 500 150 −55 to 150 Unit V V A mW °C °C
0.7±0.05
1.Source1 2.Gate1 3.Drain2
4.Source2 5.Gate2 6.
SSM6P28TU Datasheet
