SSM6P26TU Datasheet | Toshiba

SSM6P26TU .. TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) High Speed Switching Applications Unit: mm - - Optimum for high-density mounting in small packages Low on-resistance: Ron = 230mΩ (max) (@VGS = -4 V) Ron = 330mΩ (max) (@VGS = -2.5 V) 0.65 0.65 2.0±0.1 2.1±0.1 1.7±0.1 +0.1 0.3-0.05 Ron = 980mΩ (max) (@VGS = -1.8 V) 1.3±0.1 1 2 3 6 5 4 (Q1, Q2 mon) Absolute Maximum Ratings (Ta = 25°C) Characteristics Drain-Source voltage Gate-Source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating -20 ±8 -0.5 -1.5 500 150 - 55~150 Unit V V A m W °C °C 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 UF6 Note: JEDEC ― Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEITA ― temperature, etc.) may cause this product to decrease in the TOSHIBA 2-2T1B reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the Weight: 7.0 mg (typ.) absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board. (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 t, Cu Pad: 645 mm ) Marking 6 5 4 Equivalent Circuit (top view) 6 5 4 1 2 3 Q1 Q2 1 2 3 Handling Precaution When handling individual devices (which are not yet mounted on a circuit board), be sure that the environment is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects that e into direct contact with devices should be made of anti-static materials. 2007-11-01 +0.06 0.16-0.05 SSM6P26TU .. Electrical Characteristics...