SSM6P28TU Datasheet | Toshiba

SSM6P28TU .. TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type High-Speed Switching Applications Power Management Switch Applications - - - 1.8V drive P-ch 2-in-1 Low ON-resistance: Ron = 460 mΩ (max) (@VGS = - 1.8 V) 0.65 0.65 2.0±0.1 1.3±0.1 2.1±0.1 1.7±0.1 Unit: mm Ron = 306 mΩ (max) (@VGS = - 2.5 V) Ron = 234 mΩ (max) (@VGS = - 4.0 V) 1 2 3 6 5 4 Absolute Maximum Ratings (Ta = 25°C) (Q1 , Q2 mon) Characteristic Drain-source voltage Gate-source voltage Drain current Drain power dissipation Channel temperature Storage temperature range DC Pulse Symbol VDS VGSS ID IDP PD (Note 1) Tch Tstg Rating - 20 ±8 - 0.8 - 1.6 500 150 - 55 to 150 Unit V V A m W °C °C 0.7±0.05 1.Source1 2.Gate1 3.Drain2 4.Source2 5.Gate2 6.Drain1 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board (total dissipation) 2 (25.4 mm × 25.4 mm × 1.6 mm, Cu Pad: 645 mm ) JEDEC JEITA TOSHIBA Weight: 7 mg (typ.) ― ― 2-2T1B Electrical Characteristics (Ta = 25°C) (Q1 , Q2 mon) Characteristic Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Drain-source ON-resistance Input capacitance Output capacitance Reverse transfer capacitance Switching time Turn-on time Turn-off time Symbol V (BR) DSS V (BR) DSX IDSS IGSS Vth ⏐Yfs⏐ RDS (ON) Ciss Coss Crss ton toff VDSF Test Conditions ID = - 1 m A, VGS = 0 ID = - 1 m A, VGS = + 8 V VDS = - 20 V, VGS...