TC55V16256FTI-12 cmos equivalent, mos digital integrated circuit silicon gate cmos.
* Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values)
Cyc.
where high-speed access and high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The T.
The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory (SRAM) organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it operates from a single 3.3 V power.
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