Part TC55V16256FTI-12
Description MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
Manufacturer Toshiba
Size 223.48 KB
Toshiba

TC55V16256FTI-12 Overview

Key Features

  • Fast access time (the following are maximum values) TC55V16256JI/FTI-12:12 ns TC55V16256JI/FTI-15:15 ns Low-power dissipation (the following are maximum values)
  • Standby:10 mA (both devices)