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Toshiba Electronic Components Datasheet

TC55VZM216AFTN10 Datasheet

16-BIT CMOS STATIC RAM

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TC55VZM216AJJN/AFTN08,10,12
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
262,144-WORD BY 16-BIT CMOS STATIC RAM
DESCRIPTION
The TC55VZM216AJJN/AFTN is a 4,194,304-bit high-speed static random access memory (SRAM) organized as
262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high
speed, it operates from a single 3.3 V power supply. Chip enable ( CE ) can be used to place the device in a
low-power mode, and output enable ( OE ) provides fast memory access. Data byte control signals ( LB , UB ) provide
lower and upper byte access. This device is well suited to cache memory applications where high-speed access and
high-speed storage are required. All inputs and outputs are directly LVTTL compatible. The
TC55VZM216AJJN/AFTN is available in plastic 44-pin SOJ and TSOP with 400mil width for high density surface
assembly.
FEATURES
Fast access time (the following are maximum values)
TC55VZM216AJJN/AFTN08:8 ns
TC55VZM216AJJN/AFTN10:10 ns
TC55VZM216AJJN/AFTN12:12 ns
Low-power dissipation (IDDO2)
(the following are maximum values)
Cycle Time
8 10 12 ns
Operation (max) 140 130 120
Standby:4 mA (both devices)
mA
Single power supply voltage of 3.3 V ± 0.3 V
Fully static operation
All inputs and outputs are LVTTL compatible
Output buffer control using OE
Data byte control using LB (I/O1 to I/O8) and
UB (I/O9 to I/O16)
Package:
SOJ44-P-400-1.27 (AJJN) (Weight: 1.64 g typ)
TSOP II44-P-400-0.80 (AFTN) (Weight: 0.45 g typ)
PIN ASSIGNMENT (TOP VIEW)
44 PIN SOJ
44 PIN TSOP
A4
A3
A2
A1
A0
CE
I/O1
I/O2
I/O3
I/O4
VDD
GND
I/O5
I/O6
I/O7
I/O8
WE
A15
A14
A13
A12
A16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
A4
43 A6
A3
42 A7
A2
41 OE
A1
40 UB
A0
39 LB
CE
38 I/O16 I/O1
37 I/O15 I/O2
36 I/O14 I/O3
35 I/O13 I/O4
34 GND VDD
33 VDD GND
32 I/O12 I/O5
31 I/O11 I/O6
30 I/O10 I/O7
29 I/O9 I/O8
28 NU
WE
27 A8
A15
26 A9
A14
25 A10 A13
24 A11 A12
23 A17 A16
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44 A5
43 A6
42 A7
41 OE
40 UB
39 LB
38 I/O16
37 I/O15
36 I/O14
35 I/O13
34 GND
33 VDD
32 I/O12
31 I/O11
30 I/O10
29 I/O9
28 NU
27 A8
26 A9
25 A10
24 A11
23 A17
(TC55VZM216AJJN)
(TC55VZM216AFTN)
PIN NAMES
A0 to A17 Address Inputs
I/O1 to I/O16 Data Inputs/Outputs
CE Chip Enable Input
WE Write Enable Input
OE Output Enable Input
LB , UB Data Byte Control Inputs
VDD Power (+3.3 V)
GND
Ground
NU Not Usable (Input)
www.DataSheet.in
2003-01-17 1/11


Toshiba Electronic Components Datasheet

TC55VZM216AFTN10 Datasheet

16-BIT CMOS STATIC RAM

No Preview Available !

BLOCK DIAGRAM
TC55VZM216AJJN/AFTN08,10,12
I/O1
I/O2
I/O3
I/O4
I/O5
I/O6
I/O7
I/O8
I/O9
I/O10
I/O11
I/O12
I/O13
I/O14
I/O15
I/O16
A0
A1
A4
A5
VDD
A8
A9
MEMORY CELL ARRAY
GND
A13
A14
1,024 × 256 × 16
A15 (4,194,304)
A17
CE
SENSE AMP
CLOCK
GENERATOR
COLUMN DECODER
COLUMN ADDRESS BUFFER
CE
A2 A3 A6 A7 A10 A11 A12 A16
WE
OE
UB
LB
CE CE
MAXIMUM RATINGS
SYMBOL
RATING
VDD Power Supply Voltage
VIN Input Terminal Voltage
VI/O Input/Output Terminal Voltage
PD Power Dissipation
Tsolder
Soldering Temperature (10s)
Tstg Storage Temperature
Topr Operating Temperature
*: 1.5 V with a pulse width of 20% of tRC min (4 ns max)
**: VDD + 1.5 V with a pulse width of 20% of tRC min (4 ns max)
VALUE
0.5 to 4.6
0.5* to 4.6
0.5* to VDD + 0.5**
1.4
260
65 to 150
10 to 85
UNIT
V
V
V
W
°C
°C
°C
www.DataSheet.in
2003-01-17 2/11


Part Number TC55VZM216AFTN10
Description 16-BIT CMOS STATIC RAM
Maker Toshiba Semiconductor
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TC55VZM216AFTN10 Datasheet PDF






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