Datasheet Summary
Features
･BROAD BAND INTERNALLY MATCHED FET ･HIGH POWER
P1dB= 37.5dBm at 10.7GHz to 11.7GHz ･HIGH GAIN
G1dB= 7.0dB at 10.7GHz to 11.7GHz ･HERMETICALLY SEALED PACKAGE
MICROWAVE POWER GaAs FET
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C)
CHARACTERISTICS Output Power at 1dB Gain pression Point Power Gain at 1dB Gain pression Point
Drain Current
SYMBOL
CONDITIONS
P1dB
G1dB IDS1
VDS= 9V IDSset= 2.0A f=10.7 to 11.7 GHz
UNIT dBm dB
Gain Flatness
G dB
Power Added Efficiency
add
%
3rd Order Intermodulation Distortion
Drain Current
IM3 IDS2
Two Tone Test dBc
Po= 25.0dBm, f= 5MHz
(Single Carrier Level)
Channel Temperature Rise
Tch
(VDS X IDS + Pin
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