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MICROWAVE POWER GaAs FET
MICROWAVE SEMICONDUCTOR TECHNICAL DATA
FEATURES
TIM4450-4UL
HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
BROAD BAND INTERNALLY MATCHED HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C )
CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 25.5dBm
(Single Carrier Level)
SYMBOL P1dB
CONDITION
UNIT MIN. TYP. MAX. dBm 35.5 10.0 -44 36.5 11.0 1.1 37 -47 1.1 1.3 ±0.6 1.3 80
f = 4.4 – 5.
TIM4450-4UL Datasheet
