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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz
TIM4450-8SL PRELIMINARY
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 10V Power Gain at 1dB G1dB f= 4.4 to 5.0GHz Compression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level) UNIT dBm dB A dB % dBc A °C MIN. 38.5 8.5 -42 TYP. MAX. 39.5 9.5 2.2 36 -45 2.2 2.
TIM4450-8SL Datasheet
