TIM4450-4UL Description
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA.
TIM4450-4UL Key Features
- HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz
- HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz
- BROAD BAND INTERNALLY MATCHED
- HERMETICALLY SEALED PACKAGE
- 5.0GHz