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TIM4450-4UL - MICROWAVE POWER GaAs FET

Features

  • TIM4450-4UL.
  • HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz.
  • HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz.
  • BROAD BAND.

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www.DataSheet4U.com MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES TIM4450-4UL „ HIGH POWER P1dB=36.5dBm at 4.4GHz to 5.0GHz „ HIGH GAIN G1dB=11.0dB at 4.4GHz to 5.0GHz „ BROAD BAND INTERNALLY MATCHED „ HERMETICALLY SEALED PACKAGE RF PERFORMANCE SPECIFICATIONS ( Ta= 25°C ) CHARACTERISTICS Output Power at 1dB Compression Point Power Gain at 1dB Compression Point Drain Current Gain Flatness Power Added Efficiency 3rd Order Intermodulation Distortion Drain Current Channel Temperature Rise IDS2 ∆Tch IDS1 ∆G G1dB VDS= 10V dB A dB % Two Tone Test Po= 25.5dBm (Single Carrier Level) SYMBOL P1dB CONDITION UNIT MIN. TYP. MAX. dBm 35.5 10.0    -44   36.5 11.0 1.1  37 -47 1.1    1.3 ±0.6   1.3 80 f = 4.4 – 5.
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