Datasheet Summary
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA Features
T LOW INTERMODULATION DISTORTION IM3=-45 dBc at Pout= 36.5dBm Single Carrier Level T HIGH POWER P1dB=48.0dBm at 4.4GHz to 5.0GHz T HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz T BROAD BAND INTERNALLY MATCHED FET T HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
( Ta= 25°C )
UNIT dBm dB A dB % dBc A °C MIN. 47.0 8.5 -42 TYP. MAX. 48.0 9.5 13.2 42 -45 15.0 ±0.8 11.8 100
CHARACTERISTICS SYMBOL CONDITIONS Output Power at 1dB Gain P1dB pression Point Power Gain at 1dB Gain G1dB VDS= 10V pression Point f = 4.4 to 5.0GHz IDSset≅9.5A Drain Current IDS1...