Datasheet Summary
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MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
Features n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz
TIM4450-8SL PRELIMINARY n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB pression Point VDS= 10V Power Gain at 1dB G1dB f= 4.4 to 5.0GHz pression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level)...