The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet4U.com
MICROWAVE POWER GaAs FET MICROWAVE SEMICONDUCTOR
TECHNICAL DATA
FEATURES
n HIGH POWERT P1dB=39.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=9.5dB at 4.4GHz to 5.0GHz
TIM4450-8SL PRELIMINARY
n BROAD BAND INTERNALLY MATCHED n HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS ( Ta= 25° C )
CHARACTERISTICS SYMBOL CONDITION Output Power at 1dB P1dB Compression Point VDS= 10V Power Gain at 1dB G1dB f= 4.4 to 5.0GHz Compression Point Drain Current IDS1 Gain Flatness ∆G ηadd Power Added Efficiency rd 3 Order Intermodulation IM3 Distortion NOTE Drain Current IDS2 ∆Tch Channel Temperature Rise VDS X IDS X Rth(c-c) NOTE : Two Tone Test, Po=28.5dBm (Single Carrier Level) UNIT dBm dB A dB % dBc A °C MIN. 38.5 8.5 -42 TYP. MAX. 39.5 9.5 2.2 36 -45 2.2 2.
TIM4450-8SL Datasheet
