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TPC8014
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
TPC8014
Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications
• • • • • Small footprint due to small and thin package Low drain-source ON resistance: RDS (ON) = 11 mΩ (typ.) High forward transfer admittance: |Yfs| = 10 S (typ.) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single pulse avalanche energy (Note 3) Avalanche current www.DataSheet4U.
TPC8014 Datasheet
