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TPC8117
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅤ)
TPC8117
Lithium Ion Battery Applications Notebook PC Applications
Unit: mm
• Small footprint due to small and thin package • Low drain-source ON-resistance : RDS (ON) = 3.0 mΩ (typ.) • High forward transfer admittance : |Yfs| = 54 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.
TPC8117 Datasheet
