TPC8134 mosfet equivalent, silicon p-channel mosfet.
(1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 39 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (V.
* Lithium-Ion Secondary Batteries
* Power Management Switches
2. Features
(1) Small footprint due to small and t.
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