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TPCF8003
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCF8003
Notebook PC Applications Portable Equipment Applications
• • • • Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.) （VGS= 4.5V） Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR Tch Tstg Rating 20 20 ±12 7 28 2.5 0.7 3.2 3.5 150 −55 to 150 Unit V V V A 1. Drain 2. Drain 3. Drain 4. Gate 5.Source 6. Drain 7.
TPCF8003 Datasheet
