TPCF8004 Overview
MOSFETs Silicon N-Channel MOS (U-MOS) TPCF8004 1. Applications • Lithium-Ion Secondary Batteries 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source VS-8...