Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS Ⅳ)
Notebook PC Applications Portable Equipment Applications
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- - Small footprint due to a small and thin package Low drain-source ON resistance: RDS (ON) = 16 mΩ (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 30 V) Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1mA) Unit:...