Datasheet Summary
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TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
Notebook PC Applications Portable Equipment Applications
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- - Small footprint due to small and thin package Low drain-source ON-resistance: RDS (ON) =14 mΩ (typ.) （VGS= 4.5V） Low leakage current: IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Unit:...