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TPCF8004 - Silicon N-Channel MOSFET

Key Features

  • (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ. ) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-sourc.

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Datasheet Details

Part number TPCF8004
Manufacturer Toshiba
File Size 228.86 KB
Description Silicon N-Channel MOSFET
Datasheet download datasheet TPCF8004 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon N-Channel MOS (U-MOS) TPCF8004 1. Applications • Lithium-Ion Secondary Batteries 2. Features (1) Small footprint due to a small and thin package (2) Low drain-source on-resistance: RDS(ON) = 19 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (4) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCF8004 1, 2, 3, 6, 7, 8: Drain 4: Gate 5: Source VS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 7 A Drain current (pulsed) (Note 1) IDP 28 Power dissipation (t = 5 s) (Note 2) PD 2.