TPCF8102 Datasheet - Toshiba Semiconductor

TPCF8102 Silicon P-Channel MOSFET

TPCF8102 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III) TPCF8102 Notebook PC Applications Portable Equipment Applications Unit: mm Low drain-source ON resistance: RDS (ON) = 24 mΩ (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current : IDSS = 10 μA (max) (VDS = 20 V) Enhancement mode : Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200 μA) Absolute Maximum Ra.

TPCF8102 Datasheet (224.56 KB)