Datasheet Summary
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOS III)
Notebook PC Applications Portable Equipment Applications
Unit: mm
- Low drain-source ON resistance: RDS (ON) = 38 mΩ (typ.)
- High forward transfer admittance: |Yfs| = 5.4 S (typ.)
- Low leakage current: IDSS = 10 μA (max) (VDS = 20 V)
- Enhancement-mode: Vth = 0.5 to 1.2 V (VDS = 10 V, ID = 200...