TPCF8B01 Datasheet | Toshiba

TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode Notebook PC Applications Portable Equipment Applications Unit: mm - Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) - High forward transfer admittance: |Yfs| = 4.7 S (typ.) - Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) - Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) - Low forward voltage: VFM(2) = 0.46 V...