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TPCF8B01 - Silicon P-Channel MOSFET

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Datasheet Details

Part number TPCF8B01
Manufacturer Toshiba
File Size 330.33 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet TPCF8B01 Datasheet

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Full PDF Text Transcription

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TPCF8B01 TOSHIBA Multi-Chip Device Silicon P Channel MOS Type (U-MOS III) / Schottky Barrier Diode TPCF8B01 Notebook PC Applications Portable Equipment Applications Unit: mm • Low drain-source ON resistance: RDS (ON) = 72 mΩ (typ.) • High forward transfer admittance: |Yfs| = 4.7 S (typ.) • Low leakage current: IDSS =-10 μA (max) (VDS = -20 V) • Enhancement-model: Vth = -0.5 to-1.2 V (VDS =-10 V, ID = -200 μA) • Low forward voltage: VFM(2) = 0.46 V (typ.
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