TPCP8402 Datasheet | Toshiba

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III) .. Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications - Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) Low leakage current : P Channel IDSS = - 10 µA (VDS = - 30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement- mode : P Channel Vth = - 0.8 to - 2.0 V (VDS = - 10 V, ID = - 1m A) N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1m A) Unit: mm - - Note 7 5 6 7 8 Drain2 Drain2 Drain1 Drain1 - 1 2 3 4 Source1 Gate1 Source2 Gate2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current Drain power dissipation (t = 5 s) (Note 2a) Drain power dissipation (t = 5 s) (Note 2b) DC Pulse (Note 1) (Note 1) Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg - 30 - 30 ±20 - 3.4 - 13.6 1.48 1.23 0.58 0.36 0.75 - 1.7 0.12 150 - 55~150 Rating 30 30 ±20 4.2 16.8 1.48 1.23 W 0.58 0.36 2.86 2.1 m J A Unit V V V A JEDEC JEITA TOSHIBA ― ― ― Weight: 0.017 g (typ.) Circuit Configuration 8 7 6 5 Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single-device operation (Note 3a) Single-device value at dual operation(Note 3b) Single pulse avalanche energy(Note 4) Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range Marking (Note 6) m J °C °C Note: For (Note 1), (Note 2), (Note 3), (Note 4), (Note 5) and (Note 6), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution....