The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
TPCP8402
TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOS IV / U-MOS III)
www.DataSheet4U.com
TPCP8402
Portable Equipment Applications Mortor Drive Applications DC-DC Converter Applications
• Low drain-source ON resistance : P Channel RDS (ON) = 60 mΩ (typ.) N Channel RDS (ON) = 38 mΩ (typ.) High forward transfer admittance : P Channel |Yfs| = 6.0 S (typ.) N Channel |Yfs| = 7.0 S (typ.) Low leakage current : P Channel IDSS = −10 µA (VDS = −30 V) N Channel IDSS = 10 µA (VDS = 30 V) Enhancement−mode : P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1mA) N Channel Vth = 1.3 to 2.