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TPCP8405 - Silicon Dual-Channel MOSFET

Key Features

  • (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ. ) (VGS = -10 V), N-channel RDS(ON) = 20 mΩ (typ. ) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8405 PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshib.

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Datasheet Details

Part number TPCP8405
Manufacturer Toshiba
File Size 378.08 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet TPCP8405 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPCP8405 1. Applications • Cell Phones • Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 24 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 20 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -30 V), N-channel IDSS = 10 µA (VDS = 30 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8405 PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2009-11 2015-10-21 Rev.3.0 TPCP8405 4.