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TPCP8407 - Silicon Dual-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ. ) P-channel MOSFET: QSW = 5.5 nC (typ. ) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ. ) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ. ) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-chan.

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Datasheet Details

Part number TPCP8407
Manufacturer Toshiba
File Size 378.78 KB
Description Silicon Dual-Channel MOSFET
Datasheet download datasheet TPCP8407 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-channel MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3.