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TC2571 - PHEMT GaAs Power FETs

Description

The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip.

The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package.

All devices are 100% DC tested to assure consistent quality.

Features

  • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability.

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Datasheet Details

Part number TC2571
Manufacturer Transcom
File Size 180.05 KB
Description PHEMT GaAs Power FETs
Datasheet download datasheet TC2571 Datasheet

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Other Datasheets by Transcom

Part Number Description
TC2591 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
TC2181 Low Noise and High Dynamic Range Packaged GaAs FETs
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TC2211 Plastic Packaged Low Noise PHEMT GaAs FETs

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com TC2571 REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm 100 % DC Tested Low Cost Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are 100% DC tested to assure consistent quality.
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