TC2571 Datasheet | Transcom

.. REV.2_04/12/2004 1W Low-Cost Packaged PHEMT GaAs Power FETs Features - - - - - - - - - 1W Typical Output Power at 6 GHz 11dB Typical Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: PAE ≥ 43 % for Class A Operation Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 15 V Lg = 0.35 µm, Wg = 2.4 mm 100 % DC Tested Low Cost Ceramic Package PHOTO ENLARGEMENT DESCRIPTION The TC2571 is packaged the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) GaAs Power chip. The cu-based ceramic package that requires a surface-mount package is a low-cost and high performance package. All devices are...