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TC2591 Datasheet 1 W Flange Ceramic Packaged Phemt Gaas Power Fets

Manufacturer: Transcom

Overview: TC2591 REV4_20070507 1 W Flange Ceramic Packaged PHEMT GaAs Power.

Datasheet Details

Part number TC2591
Manufacturer Transcom
File Size 105.00 KB
Description 1 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet TC2591_Transcom.pdf

General Description

The TC2591 is packaged with the TC1501 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Key Features

  • 1 W Typical Output Power at 6 GHz 12 dB Typical Linear Power Gain at 6 GHz High Linearity: IP3 = 40 dBm Typical at 6 GHz High Power Added Efficiency: Nominal PAE of 43 % at 6 GHz Suitable for High Reliability.

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