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TC2696 - 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs

Description

The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Features

  • 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability.

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Datasheet Details

Part number TC2696
Manufacturer Transcom
File Size 57.13 KB
Description 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Datasheet download datasheet TC2696 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TRANSCOM TC2696 Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • • • • • • • • • 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.6 µm, Wg = 5 mm 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT January 2002 DESCRIPTION The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
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