Datasheet Summary
TRANS
Preliminary 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs
Features
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- 2 W Typical Output Power at 2.45 GHz 14 dB Typical Linear Power Gain at 2.45 GHz High Linearity: IP3 = 43 dBm Typical at 2.45 GHz High Power Added Efficiency: Nominal PAE of 43 % at 2.45 GHz Suitable for High Reliability Application Breakdown Voltage: BVDGO ≥ 18 V Lg = 0.6 µm, Wg = 5 mm 100 % DC Tested Flange Ceramic Package PHOTO ENLARGEMENT January 2002
DESCRIPTION
The TC2696 is packaged with the TC1606 Pseudomorphic High Electron Mobility Transistor (PHEMT) chip. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF...