TC2996B Description
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.
TC2996B Key Features
- 12 W Typical Power at 1.9 GHz
- 13 dB Typical Linear Power Gain at 1.9 GHz
- High Linearity: IP3 = 50 dBm Typical
- High Power Added Efficiency: Nominal PAE of 40 %
- Suitable for High Reliability Application
- Lg = 1 µm, Wg = 30 mm
- 100 % DC and RF Tested PHOTO ENLARGEMENT
- Flange Ceramic Package