• Part: TC2997D
  • Manufacturer: Transcom
  • Size: 131.75 KB
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TC2997D Key Features

  • 20W Typical Power at 2.45 GHz
  • 10dB Typical Linear Power Gain at 2.45 GHz
  • High Linearity: IP3 = 52 dBm Typical
  • High Power Added Efficiency: Nominal PAE of 40 %
  • Suitable for High Reliability Application
  • Wg = 50 mm
  • 100 % DC and RF Tested
  • Flange Ceramic Package

Related Transcom Datasheets

Part Number Description
TC2997A GaAs Power FETs
TC2997B GaAs Power FETs
TC2997C GaAs Power FETs
TC2997G GaAs Power FETs
TC2996A GaAs Power FETs

TC2997D Description

The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality.