Datasheet4U Logo Datasheet4U.com

TC2997D Datasheet 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

Manufacturer: Transcom

Datasheet Details

Part number TC2997D
Manufacturer Transcom
File Size 131.75 KB
Description 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs
Download TC2997D Download (PDF)

General Description

The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Overview

www.DataSheet4U.com TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power.

Key Features

  • 20W Typical Power at 2.45 GHz.
  • 10dB Typical Linear Power Gain at 2.45 GHz.
  • High Linearity: IP3 = 52 dBm Typical.
  • High Power Added Efficiency: Nominal PAE of 40 %.
  • Suitable for High Reliability.