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TP65H070L Datasheet 650V GaN FET

Manufacturer: Transphorm

Datasheet Details

Part number TP65H070L
Manufacturer Transphorm
File Size 1.04 MB
Description 650V GaN FET
Download TP65H070L Download (PDF)

General Description

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Overview

TP65H070L Series 650V GaN FET PQFN Series Preliminary.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging Benefits.
  • Improves efficiency/operation frequencies over Si.
  • Enables AC-DC bridgeless totem-pole PFC designs.
  • Increased power density.
  • Reduced system s.