TP65H070L

The TP65H070L is 650V GaN FET designed by Transphorm.

Product Overview

TP65H070L 650V GaN FET by Transphorm - Datasheet Preview — Datasheet preview – TP65H070L

Datasheet Details

Part number	TP65H070L
Manufacturer	Transphorm
File Size	1.04 MB
Description	650V GaN FET
Datasheet	TP65H070L-Transphorm.pdf
Additional preview pages of the TP65H070L datasheet.

Product details

Description

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. offering superior reliability and performance. AN0009: Recommended External Circuitry for GaN FETs AN0003: Printed Circuit Board Layout and Probing

Features

JEDEC qualified GaN technology.
Dynamic RDS(on)eff production tested.
Robust design, defined by.
Intrinsic lifetime tests.
Wide gate safety margin.
Transient over-voltage capability.
Very low QRR.
Reduced crossover loss.
RoHS compliant and Halogen-free packaging Benefits.
Improves efficiency/operation frequencies over Si.
Enables AC-DC bridgeless totem-pole PFC designs.
Increased power density.
Reduced system s.

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Published: Apr 29, 2019 |