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TP65H070LSG - 650V GaN FET

Download the TP65H070LSG datasheet PDF. This datasheet also covers the TP65H070L variant, as both devices belong to the same 650v gan fet family and are provided as variant models within a single manufacturer datasheet.

General Description

The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices.

offering superior reliability and performance.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS compliant and Halogen-free packaging Benefits.
  • Improves efficiency/operation frequencies over Si.
  • Enables AC-DC bridgeless totem-pole PFC designs.
  • Increased power density.
  • Reduced system s.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (TP65H070L-Transphorm.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number TP65H070LSG
Manufacturer Transphorm
File Size 1.04 MB
Description 650V GaN FET
Datasheet download datasheet TP65H070LSG Datasheet

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Other Datasheets by Transphorm

Part Number Description
TP65H070L 650V GaN FET
TP65H070LDG 650V GaN FET
TP65H035G4QS 650V FET
TP65H035G4WS SuperGaN FET
TP65H035WS 650V Cascode GaN FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
TP65H070L Series 650V GaN FET PQFN Series Preliminary Description The TP65H070L 650V, 72mΩ Gallium Nitride (GaN) FET are normally-off devices. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.