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TP65H150LSG Datasheet - Transphorm

650V GaN FET

TP65H150LSG Features

* JEDEC qualified GaN technology

* Dynamic RDS(on)eff production tested

* Robust design, defined by

* Intrinsic lifetime tests

* Wide gate safety margin

* Transient over-voltage capability

* Very low QRR

* Reduced crossover loss

* RoHS

TP65H150LSG General Description

The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device. It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies *offering superior reliability and performance. Transphorm GaN offers improved efficiency over silicon, through lower .

TP65H150LSG Datasheet (0.96 MB)

Preview of TP65H150LSG PDF

Datasheet Details

Part number:

TP65H150LSG

Manufacturer:

Transphorm

File Size:

0.96 MB

Description:

650v gan fet.

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TP65H150LSG 650V GaN FET Transphorm

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