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TP65H150LSG Datasheet 650V GaN FET

Manufacturer: Transphorm

Datasheet Details

Part number TP65H150LSG
Manufacturer Transphorm
File Size 0.96 MB
Description 650V GaN FET
Datasheet download datasheet TP65H150LSG Datasheet

General Description

The TP65H150LSG 650V, 150mΩ Gallium Nitride (GaN) FET is a normally-off device.

It combines state-of-the-art high voltage GaN HEMT and low voltage silicon MOSFET technologies—offering superior reliability and performance.

Transphorm GaN offers improved efficiency over silicon, through lower gate charge, lower crossover loss, and smaller reverse recovery charge.

Overview

TP65H150LSG 650V GaN FET PQFN Series Preliminary.

Key Features

  • JEDEC qualified GaN technology.
  • Dynamic RDS(on)eff production tested.
  • Robust design, defined by.
  • Intrinsic lifetime tests.
  • Wide gate safety margin.
  • Transient over-voltage capability.
  • Very low QRR.
  • Reduced crossover loss.
  • RoHS.