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AGR18060E Datasheet Lateral MOSFET

Manufacturer: TriQuint Semiconductor

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Datasheet Details

Part number AGR18060E
Manufacturer TriQuint Semiconductor
File Size 437.04 KB
Description Lateral MOSFET
Datasheet download datasheet AGR18060E Datasheet

Overview

AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and singlecarrier or multicarrier class AB power amplifier applications.

It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications.

Table 1.

Key Features

  • Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mA.
  • Output power (POUT): 20 W.
  • Power gain: 15 dB. www. DataSheet4U. com.
  • Efficiency: 34%.
  • Modulation spectrum: @ ±400 kHz =.
  • 62 dBc. @ ±600 kHz =.
  • 73 dBc.
  • Error vector magnitude (EVM) = 2%. Typical performance over entire GSM band:.
  • P1dB: 60 W typ.
  • Power gain: @ P1dB = 14 dB.
  • Efficiency @ P1dB = 52% typical.
  • Return loss:.
  • 10 dB. High-rel.

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