Full PDF Text Transcription for AGR18030EF (Reference)
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AGR18030EF 30 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconduct...
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h-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 30 W, which makes it ideally suited for today’s RF power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resi
AGR18030EF Datasheet
