AGR18030EF Overview
AGR18030EF 30 W, 1.805 GHz 1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18030EF is a high-voltage, gold-metallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobile munication (GSM), enhanced data for global evolution (EDGE), and multicarrier class AB power amplifier applications. This device is manufactured using advanced...
AGR18030EF Key Features
- Error vector magnitude (EVM): 1.6%
- Power gain: 15 dB
- Drain efficiency: 30%
- Modulation spectrum: @ ±400 kHz = -64 dBc. @ ±600 kHz = -71 dBc. Typical continuous wave (CW) performance over entire di
- P1dB: 33 W typical (typ)
- Power gain: @ P1dB = 14 dB
- Efficiency: @ P1dB = 51% typ
- Return loss: -12 dB. High-reliability, gold-metallization process. Low hot carrier injection (HCI) induced bias drift ov
- Stresses in excess of the