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AGR19030EF 30 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: — P1dB: 30 W typical. — Continuous wave (CW) power gain: @ P1dB = 15 dB. — CW efficiency @ P1dB = 55% typical. — Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years.
Figure 1.
AGR19030EF Datasheet
