AGR19030EF Description
AGR19030EF 30 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19030EF is a 30 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz 1990 MHz), global system for mobile munication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power...
AGR19030EF Key Features
- P1dB: 30 W typical
- Continuous wave (CW) power gain: @ P1dB = 15 dB
- CW efficiency @ P1dB = 55% typical
- Return loss: -12 dB
- 885 kHz and f2 + 885 kHz. Third-order intermodulation distortion (IM3) measured over a 1.2288 MHz BW at f1
- 2.5 MHz and f2 + 2.5 MHz
- Output power (POUT): 6 W
- Power gain: 16 dB
- Efficiency: 24.8%
- IM3: -34.5 dBc