AGR19125E Description
AGR19125E 125 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz 1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Thermal Characteristics...
AGR19125E Key Features
- 0.885 MHz and F2 + 0.885 MHz. Intermodulation distortion products measured over a 1.2288 MHz BW at F1
- 2.5 MHz and F2 + 2.5 MHz. Peak/Average (P/A) = 9.72 dB at 0.01% probability on CCDF
- Output power: 24 W
- Power gain: 15 dB
- Efficiency: 24%
- ACPR: -48 dBc
- IMD3: -34 dBc
- Return loss: -10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift ove
- Stresses in excess of the