AGR19125E - Transistor

TriQuint Semiconductor

Key Features

Typical 2 carrier, N-CDMA performance for VDD = 28 V, IDQ = 1250 mA, F1 = 1958.75 MHz, F2 = 1961.25 MHz, IS-95 (pilot, paging, sync, traffic channels 8.
13) 1.2288 MHz channel bandwidth (BW). Adjacent channels measured www. DataSheet4U. com over a 30 kHz BW at F1.
0.885 MHz and F2 + 0.885 MHz. Intermodulation distortion products measured over a 1.2288 MHz BW at F1.
2.5 MHz and F2 + 2.5 MHz. Peak/Average (P/A) = 9.72 dB at 0.01% probability on CCDF:.
Output power:.

AGR19125E transistor by TriQuint Semiconductor - Datasheet Preview

Datasheet Details

Part number	AGR19125E
Manufacturer	TriQuint Semiconductor
File Size	406.21 KB
Description	Transistor
Datasheet	AGR19125E Datasheet

Full PDF Text Transcription for AGR19125E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AGR19125E. For precise diagrams, and layout, please refer to the original PDF.

AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMO...

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5 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W Table 2.

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