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AGR19125E 125 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19125E is a 125 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz—1990 MHz), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case: AGR19125EU AGR19125EF Sym Rı JC Rı JC Value 0.5 0.5 Unit °C/W °C/W
Table 2.
AGR19125E Datasheet
