Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
CW efficiency @ P1dB = 53% typical.
Return loss:.
12 dB. Device Performance Features
High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. AGR19060EU (unflanged)
AGR19060EF (flanged)
Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can.
Full PDF Text Transcription for AGR19060E (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
AGR19060E. For precise diagrams, and layout, please refer to the original PDF.
AGR19060E 60 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS)...
View more extracted text
W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. GSM Features Typical performance over entire GSM band: — P1dB: 60 W typical. — Continuous wave (CW) power gain: @ P1dB = 14.5 dB. — CW efficiency @ P1dB = 53% typical. — Return loss: –12 dB. Device Performance Features High-reliability, gold-metalization process. Low hot carrier injec
AGR19060E Datasheet
