AGR19060E
AGR19060E is Transistor manufactured by TriQuint Semiconductor.
AGR19060E 60 W, 1930 MHz- 1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19060E is a 60 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz- 1990 MHz), global system for mobile munication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band:
- P1dB: 60 W typical.
- Continuous wave (CW) power gain: @ P1dB = 14.5 dB.
- CW efficiency @ P1dB = 53% typical.
- Return loss:
- 12 dB.
Device Performance Features
High-reliability, gold-metalizatio...
