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AGR19180EF - Transistor

Key Features

  • High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of.

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Datasheet Details

Part number AGR19180EF
Manufacturer TriQuint Semiconductor
File Size 446.25 KB
Description Transistor
Datasheet download datasheet AGR19180EF Datasheet

Full PDF Text Transcription for AGR19180EF (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for AGR19180EF. For precise diagrams, and layout, please refer to the original PDF.

AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LD...

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180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications. Device Performance Features High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection.

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