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AGR19180EF 180 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), code division multiple access (CDMA), global system for mobile communication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
Device Performance Features
High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection.
AGR19180EF Datasheet
