AGR19180EF
AGR19180EF is Transistor manufactured by TriQuint Semiconductor.
AGR19180EF 180 W, 1930 MHz- 1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz- 1990 MHz), code division multiple access (CDMA), global system for mobile munication (GSM/EDGE), time division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
Device Performance Features
High-reliability, gold-metalization process. Hot carrier injection (HCI) induced bias drift of <5% over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated...
