AGR19180EF Overview
AGR19180EF 180 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19180EF is a 180 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz 1990 MHz), code division multiple access (CDMA), global system for mobile munication (GSM/EDGE), time division multiple access (TDMA), and...
AGR19180EF Key Features
- 885 kHz, f2 + 885 kHz. Distortion products measured over 1.2288 MHz channel BW at f1
- 2.5 MHz, f2 + 2.5 MHz. Peak/avg = 9.72 dB @ 0.01% probability on CCDF
- Output power: 38 W
- Power gain: 14.5 dB
- Efficiency: 26%
- IM3: -33 dBc
- ACPR: -48.5 dBc
- Return loss: -12 dB
- Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must