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AGR19090E 90 W, 1930 MHz—1990 MHz, PCS LDMOS RF Power Transistor
Introduction
The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal communication service (PCS) (1930 MHz— 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile communication (GSM/EDGE), time-division multiple access (TDMA), and single-carrier or multicarrier class AB power amplifier applications.
GSM Features
Typical performance over entire GSM band: — P1dB: 90 W typical. — Continuous wave (CW) power gain: @ P1dB = 14.0 dB. — CW Efficiency @ P1dB = 50% typical. — Return loss: –12 dB.
Device Performance Features
High-reliability, gold-metalization process.
AGR19090E Datasheet
