AGR19090E Overview
AGR19090E 90 W, 1930 MHz 1990 MHz, PCS LDMOS RF Power Transistor Introduction The AGR19090E is a 90 W, 28 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for personal munication service (PCS) (1930 MHz 1990 MHz), wide-band code division multiple access (W-CDMA), global system for mobile munication (GSM/EDGE), time-division multiple access (TDMA), and...
AGR19090E Key Features
- P1dB: 90 W typical
- Continuous wave (CW) power gain: @ P1dB = 14.0 dB
- CW Efficiency @ P1dB = 50% typical
- Return loss: -12 dB
- 885 kHz and f2 + 885 kHz. Third-order intermodulation (IM3) distortion measured over a 1.2288 MHz BW at f1
- 2.5 MHz and f2 + 2.5 MHz
- Output power (POUT): 18 W
- Power gain: 15.0 dB
- Efficiency: 25.8%
- IM3: -34.5 dBc